Orientation dependence of optical properties in long wavelength strained quantum-well lasers
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 1 (2) , 211-217
- https://doi.org/10.1109/2944.401199
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wellsApplied Physics Letters, 1994
- Sub-mA threshold operation of λ=1.5 μm strained InGaAs multiple quantum well lasers grown on (311)B InP substratesApplied Physics Letters, 1992
- Efficient band-structure calculations of strained quantum wellsPhysical Review B, 1991
- Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wellsSemiconductor Science and Technology, 1989
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InPJournal of Crystal Growth, 1984
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955