Channeled implantation with a parallel scanned ion beam
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 357-360
- https://doi.org/10.1016/0168-583x(89)90203-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Channeling effect for low energy ion implantation in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Planar channeling effects in Si(100)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978