Uniform doping of channeled-ion implantation
- 1 February 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (2) , 608-613
- https://doi.org/10.1063/1.324687
Abstract
This paper describes an apparatus designed to obtain spatial uniformity of channeled-ion implantation using a parallel-scanning system. Descriptions of the special sample holder which can be tilted in two directions and a detecting scheme for channeling alignment are also included. This apparatus implanted channeled B ions along the [110] axis of silicon (Si). The variations of the implanted profiles and the breakdown voltages of the fabricated diodes in a wafer are compared with those obtained by random implantation and by channeled-ion implantation using an angular-scanning system. High doping uniformity comparable to that of random implantation is obtained reproducibly, proving that channeled-ion implantation using a parallel-scanning system can provide a controlled technique for device fabrication.This publication has 6 references indexed in Scilit:
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