The kinetics of self ion amorphization of silicon
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 596-599
- https://doi.org/10.1016/0168-583x(93)96189-j
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Subsurface Processing of Electronic Materials Assisted by Atomic DisplacementsMRS Bulletin, 1992
- Crystalline-to-amorphous transition for Si-ion irradiation of Si(100)Physical Review B, 1991
- Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in siliconJournal of Materials Research, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988