SiGe-power amplifiers in flipchip and packaged technology
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15292517,p. 35-38
- https://doi.org/10.1109/rfic.2001.935636
Abstract
A SiGe HBT with 22 GHz ft was optimized for power applications. A driver stage measured on wafer achieves Psat=23 dBm at 1.8 GHz with PAE up to 68%. A family of SiGe power amplifiers was developed for assembly in standard PSSOP packages and in flipchip technology. There are single and dualband PAs for 900 MHz and 1800 MHz GSM bands. The PAs are fully integrated three stage devices and feature high gain, output power and power added efficiency. The ICs incorporate power control circuits and operate from one positive supply voltage which can be as low as 2.5 V. At a nominal operating voltage of 3.5 V the 900 MHz packaged amplifier delivers up to 35 dBm output power at 58% PAE. The 1800 MHz amplifier produces up to 33 dBm power at 48% PAE. The devices can survive 5 V supply voltage under full power. An optimized application design gives similar results for packaged and flipchip devices.Keywords
This publication has 8 references indexed in Scilit:
- SiGe-technology and components for mobile communication systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- RFIC's for mobile communication systems using SiGe bipolar technologyIEEE Transactions on Microwave Theory and Techniques, 1998
- Small-signal modeling of HBTs using a hybrid optimization/statistical techniqueIEEE Transactions on Microwave Theory and Techniques, 1998
- EM-ANN models for microstrip vias and interconnects in dataset circuitsIEEE Transactions on Microwave Theory and Techniques, 1996
- An accurate equivalent circuit model of flip chip and via interconnectsIEEE Transactions on Microwave Theory and Techniques, 1996
- Parameter-extraction method for heterojunction bipolar transistorsIEEE Microwave and Guided Wave Letters, 1992