A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3 (0149645X) , 1319-1322
- https://doi.org/10.1109/mwsym.1997.596570
Abstract
An enhancement-mode power PHEMT process has been developed for low-voltage wireless subscriber power amplifier applications. Employing a highly selective reactive ion etching process to define the vertical position of the Schottky gate, this device only requires a positive voltage. A 12-mm gate periphery device demonstrated 33 dBm output power (167 mW/mm), 14.7 dB power gain (16.7 dB linear gain), and 65.4% PAE at 3 V and 1.8 GHz.Keywords
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