Many-body effects and the diffusion of high-density electrons and holes in semiconductors

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Abstract
Exchange and correlation effects at high electron and hole densities can cause a reduction of the energy band gap in semiconductors. The authors demonstrate theoretically that the ambipolar diffusion coefficient is therefore less than that derived from the conventional Boltzmann transport equation even for densities as low as 1015 cm-3. The diffusion coefficient density dependence is also significantly different from that derived by Wavelet's manybody theory, primarily because of differences in the statistical mechanical description of the carrier distributions.