Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
- 31 October 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (10) , 1423-1426
- https://doi.org/10.1016/0038-1101(96)00066-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A new method for on wafer noise measurementIEEE Transactions on Microwave Theory and Techniques, 1993
- Observation and mechanism of kink effect in depletion-mode AlGaAs/GaAs and AlGaAs/GaInAs HEMTsElectronics Letters, 1989
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989