Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (9) , 1340-1350
- https://doi.org/10.1109/22.32217
Abstract
No abstract availableThis publication has 39 references indexed in Scilit:
- Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistorsIEEE Transactions on Electron Devices, 1985
- A Monte Carlo particle study of the intrinsic noise figure in GaAs MESFET'sIEEE Transactions on Electron Devices, 1985
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- Design of Microwave GaAs MESFET's for Broad-Band Low-Noise AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1979
- An efficient method for computer aided noise analysis of linear amplifier networksIEEE Transactions on Circuits and Systems, 1976
- Noise Characterization of Linear Twoports in Terms of Invariant ParametersIEEE Journal of Solid-State Circuits, 1967
- Available Power Gain, Noise Figure, and Noise Measure of Two-Ports and Their Graphical RepresentationsIEEE Transactions on Circuit Theory, 1966
- Wave Representation of Amplifier NoiseIRE Transactions on Circuit Theory, 1962
- Optimum Noise Performance of Linear AmplifiersProceedings of the IRE, 1958
- Nyquist's and Thevenin's Theorems Generalized for Nonreciprocal Linear NetworksJournal of Applied Physics, 1955