Comparison of bulk and quantum wire photodetectors

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Abstract
A theoretical comparison of the operating characteristics of p‐i‐n GaAs/AlGaAs photodetectors incorporating either bulk or quantum wire absorbing regions is presented in an effort to realistically compare both the bandwidth and the quantum efficiency of these devices. Devices utilizing quantum wire absorbing regions may have enhanced operating characteristics assuming increased absorption and saturated carrier drift velocities can be realized in these quantized structures.