Formation of a Cu-Al-Se Phase with a Long-Range Order by Molecular Beam Epitaxy
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1379-1381
- https://doi.org/10.1143/jjap.29.l1379
Abstract
A new phase in the Cu-Al-Se system was found on GaP substrates under growth conditions of an excess Cu vapour pressure and a growth temperature of 1073 K by use of molecular beam epitaxy. The mean composition of this film is close to the formula Cu3AlSe5, and differs considerably from the chalcopyrite structure compound CuAlSe2. We provide the first evidence of the presence of a new Cu-Al-Se phase with a long-range order.Keywords
This publication has 8 references indexed in Scilit:
- Effect of Composition on the Optical and Electrical Characteristics of Flash Evaporated Cu2−xInxSe2 Thin FilmsPhysica Status Solidi (a), 1989
- Defect-ordered phases in a multiphase Cu-In-Se materialJournal of Applied Physics, 1989
- Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAsJournal of Applied Physics, 1989
- Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substratesJournal of Crystal Growth, 1989
- Epitaxial Growth of CuGaS2 by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2Journal of Crystal Growth, 1987
- Growth and process identification of CuInS2 on GaP by chemical vapor depositionJournal of Crystal Growth, 1981
- Electron microscopic study of the domain structure and of the transition state in Cu0.5In2.5Se4Physica Status Solidi (a), 1979