Growth and process identification of CuInS2 on GaP by chemical vapor deposition
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 116-124
- https://doi.org/10.1016/0022-0248(81)90278-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The use of a metalorganic compound for the growth of InP-epitaxial layersJournal of Electronic Materials, 1981
- Growth and properties of CuInNS2 epitaxial layers obtained by chemical vapour transportSolar Energy Materials, 1980
- Growth of CuInS2 and its characterizationRevue de Physique Appliquée, 1978
- Electron and hole conductivity in CuInS2Journal of Physics and Chemistry of Solids, 1976
- Optical and Electrical Properties of AgGaand AgGaPhysical Review B, 1971
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Darstellung von Indium‐trialkylen über In–Mg‐Legierung oder ‐MischungZeitschrift für anorganische und allgemeine Chemie, 1963