The use of a metalorganic compound for the growth of InP-epitaxial layers
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1) , 185-192
- https://doi.org/10.1007/bf02654908
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- InP epitaxy with a new metalorganic compoundElectronics Letters, 1980
- Continuous room-temperature multiple-quantum-well AlxGa1−xAs-GaAs injection lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- Photoluminescence characterization of solution and lec grown InPJournal of Electronic Materials, 1979
- Organometallic VPE growth of AlxGa1−xAsJournal of Electronic Materials, 1979
- High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1973
- Growth of Single Crystal GaP from Organometallic SourcesJournal of the Electrochemical Society, 1969
- Darstellung von Indium‐trialkylen über In–Mg‐Legierung oder ‐MischungZeitschrift für anorganische und allgemeine Chemie, 1963