Determination of the diffusion coefficient of arsenic in Ga solution from growth rate measurements of LPG GaAs
- 1 January 1976
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 11 (4) , 339-345
- https://doi.org/10.1002/crat.19760110403
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- The physical processes occurring during liquid phase epitaxial growthJournal of Crystal Growth, 1974
- A Method of Determining the Liquid Phase Epitaxial GaAs Growth Mechanism Based on Growth Rate MeasurementsCrystal Research and Technology, 1974
- Current-Controlled Growth and Dopant Modulation in Liquid Phase EpitaxyJournal of the Electrochemical Society, 1973
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969
- Impurity Heterogeneities and Multiple-Beam InterferometryJournal of the Electrochemical Society, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967