Origin of Luminescence from InGaN Diodes
- 4 January 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (1) , 237-240
- https://doi.org/10.1103/physrevlett.82.237
Abstract
We report the first direct observation of phase decomposition in a luminescent alloy and show that this decomposition, allied to quantum confinement enhancements, accounts for the surprisingly high efficiency of InGaN-based diodes manufactured by Nichia Chemical Industries. Hence nanostructure, rather than composition, is responsible for the success of these devices. A common nanostructure, in the form of nearly pure InN quantum dots, occurs across a large range of average indium content in InGaN and leads to a universal scalability of the optical spectra.Keywords
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