Luminescences from localized states in InGaN epilayers
- 26 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21) , 2822-2824
- https://doi.org/10.1063/1.119013
Abstract
Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1−xN(x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.Keywords
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