Field effect in amorphous germanium
- 1 June 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (6) , 2690-2692
- https://doi.org/10.1063/1.321904
Abstract
The change in conductance of an amorphous germanium film due to a transverse electric field was observed. The films were electron‐beam vacuum deposited at controlled rates onto Si‐SiO2 substrates and then annealed in situ. The field effect is considerably smaller than that observed in amorphous silicon. However, the analysis of the data indicates that the density of localized state near the Fermi level is about 1021/cm3 eV and increases with energy away from the Fermi level. The films deposited at low rates on 23 °C substrates are n type, whereas the films deposited at similar rates onto hot substrates behave as p type.This publication has 8 references indexed in Scilit:
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