Investigation of the bubble formation mechanism in a-Si:H films by Fourier-transform infrared microspectroscopy
- 15 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8) , 3972-3974
- https://doi.org/10.1063/1.341355
Abstract
The formation of bubbles and holes in hydrogenated amorphous silicon (a‐Si:H) films after isochronal annealing has been investigated. The internal stress of the bubble in an a‐Si:H film has been determined by the relationship between the diameter and height of a bubble. In addition, the internal stress of the bubble has also been investigated based on the difference in hydrogen concentration between the flat and bubble areas determined by Fourier‐transform infrared microspectroscopy. Consistent results are obtained from both methods regarding the magnitude of the internal stress. These results indicate that the bubble is formed by molecular hydrogen evolving from the a‐Si:H film.This publication has 6 references indexed in Scilit:
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