Hydrogen-, boron-, and hydrogen-boron-related low temperature photoluminescence of 6H-SiC
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1321-1323
- https://doi.org/10.1016/s0925-9635(97)00100-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Hydrogen passivation of donors and acceptors in SiCApplied Physics Letters, 1995
- Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxyJournal of Electronic Materials, 1995
- Detection of C?H bonds in crystalline ?-SiC by IR-absorption measurementsApplied Physics A, 1994
- Magneto-optical measurements on H-implantedSiCPhysical Review B, 1974
- Efficient Luminescence Centers in H- and D-ImplantedSiCPhysical Review B, 1973
- Photoluminescence of Radiation Defects in Ion-ImplantedSiCPhysical Review B, 1972
- Polarized Edge Emission of SiCPhysical Review B, 1960