Encapsulated semiconductor nanocrystals formed in insulators by ion beam synthesis
- 1 May 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 141 (1-4) , 228-240
- https://doi.org/10.1016/s0168-583x(98)00091-3
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Addendum:‘‘Ion beam synthesis and stability of GaAs nanocrystals in silicon’’ [Appl. Phys. Lett. 68, 2389 (1996)]Applied Physics Letters, 1996
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996
- Improvement of the Luminescing Behaviour of Simmplanted SiO2 FilmsMRS Proceedings, 1996
- Synthesis and Properties of GaAs Nanocrystals in Sio2 Formed by Ion ImplantationMRS Proceedings, 1995
- Compound Semiconductor Nanocrystals formed by Sequential Ion ImplantationMRS Proceedings, 1994
- Formation of TiN phase in SiO2 and Si through ion implantation of constituent elementsMaterials Letters, 1992
- Quantum size effects in optical properties of CdS-glass compositesPhysical Review B, 1988
- Surface derivatization and isolation of semiconductor cluster moleculesJournal of the American Chemical Society, 1988
- Quantum confinement effects of semiconducting microcrystallites in glassJournal of Applied Physics, 1987
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983