Two dimensional transient device simulator with deep trap model for compound semiconductor devices
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34 (01631918) , 151-154
- https://doi.org/10.1109/iedm.1989.74249
Abstract
A two-dimensional transient device simulator, BIUNAP-CT, for compound semiconductors is described. The main purpose of this simulator is to clarify deep trap effects on devices, in particular those for semi-insulating substrates. Heterojunction devices can also be treated. The simulator is based on the drift-diffusion model for electron and hole transports and Shockley-Read-Hall (SRH) statistics for deep traps. The finite differential method, Gummel's scheme, Mock's scheme, and the full implicit backward Euler method were adopted to solve the device equations. Examples of simulation results on GaAs MESFET side-gating effects in transient action are presented. Various drain current responses to side-gate voltage change were revealed.<>Keywords
This publication has 9 references indexed in Scilit:
- Mechanism of electrostatic potential conduction in semi-insulating substratesJournal of Applied Physics, 1989
- Semi-insulating current blocking property simulations for buried heterostructure laser diodesApplied Physics Letters, 1988
- Mechanisms for low-frequency oscillations in GaAs FET'sIEEE Transactions on Electron Devices, 1987
- GaAs MESFET interface considerationsIEEE Transactions on Electron Devices, 1987
- Backgating in GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- A time-dependent numerical model of the insulated-gate field-effect transistorSolid-State Electronics, 1981
- Stability of performance and interfacial problems in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964