Über die zeitliche stabilität von getempertem, reinem silizium
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 349-362
- https://doi.org/10.1016/0038-1101(69)90090-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Quenched-In Defects in p-Type SiliconJournal of Applied Physics, 1964
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- The Effect of Heat Treatment on the Minority Carrier Lifetime in SiliconJournal of the Physics Society Japan, 1961
- Heat Treatment Centers in SiliconJournal of the Physics Society Japan, 1961
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957