40 Gbit/s n – i – n InP Mach–Zehnder modulator with a π voltage of 2.2 V
- 2 October 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (20) , 1464-1466
- https://doi.org/10.1049/el:20030939
Abstract
Using an n–i–n heterostructure, a travelling-wave Mach–Zehnder modulator on an InP substrate has been developed. An extremely small π voltage (Vπ) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.Keywords
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