Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy
- 2 March 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (3) , 457-471
- https://doi.org/10.1016/0022-0248(91)90283-b
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAsApplied Physics Letters, 1989
- Surface chemical kinetics during the growth of GaAs by chemical beam epitaxyJournal of Crystal Growth, 1989
- A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxyJournal of Applied Physics, 1988
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxyJournal of Applied Physics, 1987
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4Japanese Journal of Applied Physics, 1987
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985