Acoustic memory correlator using GaAs Schottky diodes
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (9) , 517-518
- https://doi.org/10.1063/1.90140
Abstract
A memory correlator using a matrix of Pt‐GaAs Schottky diodes airgap coupled to a LiNbO3 substrate has been built. The high barrier potential of this type of junction (900 mV) leads to low diode leakage currents. As a consequence, storage time constants of up to 0.4 s have been measured at room temperature, while charging times can be as short as 10 ns. The other device characteristics are detailed, and particularly the possibility of correlating signals of several millisecond duration.Keywords
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