Novel multioctave MMIC active isolator (1–20 GHz)
- 12 October 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (21) , 1420-1422
- https://doi.org/10.1049/el:19890948
Abstract
We present a multioctave MMIC active isolator (1–20 GHz) requiring only two fidd-effect transistors (MESFETs or HEMTs) and exhibiting more than 20 dB input return loss, 18 dB output return loss with more than 20 dB reverse loss and less than 9 dB transmission loss.Keywords
This publication has 1 reference indexed in Scilit:
- 1 to 20 GHZ Monolithic Distributed Amplifier using GaAs MESFET'S or HEMT'SPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987