Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
- 1 January 1999
- journal article
- conference paper
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 147 (1-4) , 29-34
- https://doi.org/10.1016/s0168-583x(98)00601-6
Abstract
No abstract availableKeywords
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