Lattice engineered compliant substrate for defect-free heteroepitaxial growth
- 31 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (13) , 1685-1687
- https://doi.org/10.1063/1.118669
Abstract
Presented here is proof-of-principle that a thin single crystal semiconductor film—when twist-wafer bonded to a bulk single crystal substrate (of the same material)—will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 Å film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their 〈110〉 directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In0.35Ga0.65P(∼1% strain) were grown with thicknesses of 3000 Å, thirty times the Matthews–Blakeslee critical thickness, on twist-wafer-bonded films of GaAs.This publication has 6 references indexed in Scilit:
- Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thicknessApplied Physics Letters, 1993
- New approach to grow pseudomorphic structures over the critical thicknessApplied Physics Letters, 1991
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- On the ambiguity between moiré fringes and the electron diffraction contrast from closely spaced dislocationsPhysica Status Solidi (a), 1970