Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

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Abstract
Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process.