Annealing study of the infrared absorption in an amorphous silicon dioxide film
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 459-461
- https://doi.org/10.1016/0022-3093(89)90616-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- Band limits and the vibrational spectra of tetrahedral glassesPhysical Review B, 1979
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- Hydrides and Hydroxyls in Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1971