SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A 'self-aligned' selective MBE technology for high-performance bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- A Low-stress Trench Isolation Structure And Its Electrical Characteristics Of Sub 20 Ps High-speed ECLPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1992
- MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/IEEE Electron Device Letters, 1992