A 'self-aligned' selective MBE technology for high-performance bipolar transistors
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 607-610
- https://doi.org/10.1109/iedm.1990.237125
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- 63-75 GHz fT SiGe-base heterojunction bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxyIEEE Electron Device Letters, 1990
- Selective epitaxy base transistor (SEBT)IEEE Electron Device Letters, 1988