Selective epitaxy base transistor (SEBT)
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5) , 259-261
- https://doi.org/10.1109/55.709
Abstract
A bipolar transistor using selective epitaxy for base formation in a double-poly self-aligned structure is presented. The intrinsic base was formed by a selective-epitaxial deposition in place of ion implantation. Such epitaxial base processes are capable of achieving a narrow intrinsic base sheet resistance R/sub bi/ and base-emitter diffusion capacitance c/sub be/ compared to advanced ion-implanted processes. A selective epitaxial base can be simply introduced in advanced double-poly self-aligned processes compared to a nonselective epitaxial layer.<>Keywords
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