Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (7) , 1605-1611
- https://doi.org/10.1109/16.85156
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Power thyristors using IC-technologyPublished by Springer Nature ,2007
- 8000 V 1000 A gate turn-off thyristor with low on-state voltage and low switching lossPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Evolution of MOS-bipolar power semiconductor technologyProceedings of the IEEE, 1988
- MOS-Controlled thyristors—A new class of power devicesIEEE Transactions on Electron Devices, 1986
- Turn-On and Turn-Off Characteristics of a 4.5-kV 3000-A Gate Turn-Off ThyristorIEEE Transactions on Industry Applications, 1986
- Cell geometry effect on IGT latch-upIEEE Electron Device Letters, 1985
- Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- MOS Controlled thyristors (MCT's)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Junction Field-Effect DevicesPublished by Springer Nature ,1982
- Physics and simulation of small MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982