Liquid phase epitaxial growth of lattice-matched GaP-Ga0.5Al0.5P-GaP layer under controlled phosphorus vapor pressure and reduced oxygen contamination
- 1 May 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 46 (5) , 637-643
- https://doi.org/10.1016/0022-0248(79)90181-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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