COLD-CATHODE ELECTRON EMISSION FROM SILICON
- 1 April 1971
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (7) , 272-273
- https://doi.org/10.1063/1.1653659
Abstract
Cold‐cathode electron emission has been obtained from forward‐biased silicon p‐n junctions whose surfaces were activated to a state of negative electron affinity. Currents as high as 7.3 mA were obtained with current densities in excess of 1 A/cm2. Efficiencies as high as 2% were measured, and currents of tens of microamperes were drawn for several hours.Keywords
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