Electron-Emission Microscope and Velocity Distribution Studies on Silicon Carbide p-n Junction Emitters
- 1 March 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (3) , 549-550
- https://doi.org/10.1063/1.1736038
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Field Induced Photoemission and Hot-Electron Emission from GermaniumJournal of Applied Physics, 1960
- Photoemission from Si Induced by an Internal Electric FieldPhysical Review B, 1960
- Electron Emission from Breakdown Regions in SiCJunctionsPhysical Review Letters, 1959
- Electrical Contacts to Silicon CarbideJournal of Applied Physics, 1958
- Electron Emission from Silicon p–n JunctionsNature, 1958
- Electron Emission from Avalanche Breakdown in SiliconPhysical Review B, 1957