Characteristics of a ZnS:Pd:Cs2O Cold Cathode
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (2) , 778-781
- https://doi.org/10.1063/1.1658748
Abstract
Schottky‐barrier cold cathodes have been fabricated using Pd on n‐type ZnS. The Pd was deposited in the form of a film 30–50 Å thick on the freshly‐cleaved surface of the ZnS in an ultrahigh‐vacuum system, and cesiation was carried out without removal from the system. Cold emission currents up to 0.01 A/cm2 were obtained with an efficiency as high as 1.5%. Barrier height measurements indicate that the electrons enter the junction at an energy level 0.5 eV above the vacuum level, but current characteristics reveal a loss process not yet identified.This publication has 5 references indexed in Scilit:
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