High power AlGaN/GaN HEMTs for microwave applications
- 1 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1569-1574
- https://doi.org/10.1016/s0038-1101(97)00106-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaNJournal of Electronic Materials, 1996
- Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequencyElectronics Letters, 1996
- Theoretical study of electron transport in gallium nitrideJournal of Applied Physics, 1995
- Thermal resistance of heat sinks with temperature-dependent conductivitySolid-State Electronics, 1975