Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7S)
- https://doi.org/10.1143/jjap.36.4547
Abstract
Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (T e≃0.2 eV) and low ion-temperature (T i≃0.1 eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.Keywords
This publication has 5 references indexed in Scilit:
- Electron-temperature control for plasmas passing through a negatively biased gridApplied Physics Letters, 1994
- Control of the Electron and Hole Drift mobilities in Plasma Deposited a-Si:HMRS Proceedings, 1994
- Electron drift mobility in amorphous Si: HPhilosophical Magazine Part B, 1986
- Preparation of highly photosensitive hydrogenated amorphous Si-Ge alloys using a triode plasma reactorApplied Physics Letters, 1985
- Electron and hole drift mobility in amorphous siliconApplied Physics Letters, 1977