Multiple-gated submicron vertical tunnelling structures
- 1 May 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (5) , 631-636
- https://doi.org/10.1088/0268-1242/12/5/018
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Shell Filling and Spin Effects in a Few Electron Quantum DotPhysical Review Letters, 1996
- A new design for submicron double-barrier resonant tunnelling transistorsSemiconductor Science and Technology, 1996
- Single-electron phenomena in semiconductorsSemiconductor Science and Technology, 1996
- Resonant Tunneling Through Two Discrete Energy StatesPhysical Review Letters, 1995
- Sub-Micron Vertical AlGaAs/GaAs Resonant Tunneling Single Electron TransistorJapanese Journal of Applied Physics, 1995
- Observation of Photon-Assisted Tunneling through a Quantum DotPhysical Review Letters, 1994
- Variable-area resonant tunnelling diodes using implanted gatesElectronics Letters, 1992
- Vertical transport in Schottky-gated, laterally confined double-barrier quantum well heterostructuresSurface Science, 1992
- Gated resonant tunnelling devicesElectronics Letters, 1991