Electron tunneling through ultrathin SiO2
- 31 October 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 41 (1) , 35-38
- https://doi.org/10.1016/s0921-5107(96)01619-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe MicroscopiesJapanese Journal of Applied Physics, 1995
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963