Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7B) , L903-906
- https://doi.org/10.1143/jjap.34.l903
Abstract
The tunneling current through ultrathin (3.0-6.0 nm) gate oxides has been measured as a function of the voltage across SiO2, V OX, and compared with results of existing theories utilizing the WKB approximation. The electron effective mass in the Fowler-Nordheim tunneling region (V OX≥3.25 V) is obtained to be (0.34±0.04)m 0 and that in the direct tunneling region (V OXm 0. It is also shown that the charge-to-breakdown for electron injection from n+poly-Si gates is not significantly degraded by decreasing the oxide thickness and is even dramatically improved for the case of a 3.0 nm-thick gate oxide.Keywords
This publication has 7 references indexed in Scilit:
- Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1995
- Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe MicroscopiesJapanese Journal of Applied Physics, 1995
- Preoxide-Controlled Oxidation for Very Thin Oxide FilmsJapanese Journal of Applied Physics, 1993
- Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall MorphologyMRS Proceedings, 1992
- Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SIO2 Films on SiliconMRS Proceedings, 1992
- Layer-by-Layer Oxidation of SiliconMRS Proceedings, 1991
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963