Layer-by-Layer Oxidation of Silicon
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si SurfacesJapanese Journal of Applied Physics, 1990
- Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification techniqueJournal of Applied Physics, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Reversal of Relative Oxidation Rates of and Oriented Silicon Substrates at Low Oxygen Partial PressuresJournal of the Electrochemical Society, 1980
- ELECTRONIC STRUCTURE OF A MODEL Si-SiO2 INTERFACEPublished by Elsevier ,1978
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962