Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall Morphology
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
HF etches silicon oxide, removes metal impurities and completely terminates the silicon surface with hydrogen. The H-passivated Si surfaces are stable, but can be slowly and selectively etched in buffered HF solutions or in hot water, changing the initial morphology of the interface. Si(111) surfaces flatten, forming large, ideally H-terminated (111) planes. Si(100) surfaces roughen, ultimately developing H-terminated (111) facets.Keywords
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