Formation of SiH bonds on the surface of microcrystalline silicon covered with SiOx by HF treatment
- 1 May 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 50 (7) , 673-675
- https://doi.org/10.1016/0038-1098(84)90156-x
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Growth of Hydrogenated Germanium Microcrystal by Reactive SputteringJapanese Journal of Applied Physics, 1983
- Hydrogenated crystalline silicon fabricated at low-substrate temperatures by reactive sputtering in He-H2 atmosphereSolid State Communications, 1981
- Investigation of the chemical properties of stain films on silicon by means of infrared spectroscopySurface Science, 1965