Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
- 1 August 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (8A) , L505-507
- https://doi.org/10.1143/jjap.22.l505
Abstract
Microcrystalline germanium (µc-Ge) was prepared by reactive sputtering in H2 of pressure about 1 Pa and 270 Pa at a substrate holder temperature 150°C. The average diameter of microcrystals, about 40 nm, was larger than that of microcrystalline silicon (µc-Si) obtained by the same technique. Hydrogen of 1–3 at.% was detected in the µc-Ge film by the infrared absorption spectrum. Hydrogen environment in µc-Ge was discussed in comparison with µc-Si.Keywords
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