The 2 × 1 reconstruction of the Ge(001) surface
- 30 January 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (3) , L55-L60
- https://doi.org/10.1088/0022-3719/14/3/002
Abstract
Low-energy electron diffraction (LEED) analyses of several structure models for the Ge(001) 2 × 1 surface confirm that the reconstruction involves at least 3 layers, and demonstrate that models with buckled asymmetric dimers are favoured over models with symmetric dimers. Three models with different amounts of buckling are given, which show equivalent moderate agreement with experiment.Keywords
This publication has 7 references indexed in Scilit:
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979
- On the structure of reconstructed Si(001)2×1 and Ge(001)2×1 surfacesJournal of Physics C: Solid State Physics, 1979
- The structure of Si(OOl) 2 × 1 surface — Studied by low energy electron diffractionSurface Science, 1978
- LEED crystallographyJournal of Physics C: Solid State Physics, 1978
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- Theory of reconstruction induced subsurface strain — application to Si(100)Surface Science, 1978
- A reliability factor for surface structure determinations by low-energy electron diffractionSurface Science, 1977