Growth and properties of silicon films on aluminum-nitride films on sapphire
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1580-1582
- https://doi.org/10.1063/1.322773
Abstract
Epitaxial layers of silicon have been grown on aluminum‐nitride films on sapphire by vapor‐phase deposition using pyrolysis of silane. The structure of the silicon films is examined by the reflection electron diffraction technique and shown to be a single crystal of orientation (100)Si∥ (112̄0)AlN∥ (011̄2)Al2O3. Lattice matching between Si and AlN along orthogonal axes of [100] Si are 0.78 and 9.0%, respectively. The growth and electrical properties of silicon films are described in some detail. Resistivity and mobility of p‐type and n‐type silicon films have been measured as functions of temperature. The maximum mobility of 150 cm2/V sec has been obtained for film thickness between 1 and 4 μm. The aluminum autodoping effect upon these films is found to be higher than that of silicon films on sapphire used as control samples.This publication has 8 references indexed in Scilit:
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