Facet effect and electrical conductivity in undoped pulled GaSb crystals
- 1 October 1964
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (10) , 767-769
- https://doi.org/10.1016/0038-1101(64)90036-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Distribution Coefficients of Impurities in Gallium AntimonideJournal of Applied Physics, 1961
- A possible mechanism of crystal growth from the melt and its application to the problem of anomalous segregation at crystal facetsSolid-State Electronics, 1961
- Cross-sectional resistivity variations in germanium single crystalsSolid-State Electronics, 1960
- Electrical Properties of Gallium AntimonidePhysical Review B, 1955
- Some Properties of-Type Gallium Antimonide between 15°K and 925°KPhysical Review B, 1954